2N7000CSM datasheet(2/2 Pages) SEME-LAB

2 / 2 page

Parameter

Min.

Typ.

Max.

Unit

RqJA

Thermal Resistance, Junction to Ambient

416

°C/W

V(BR)DSS Gate – Source Breakdown Voltage

VGS(th)

Gate Threshold Voltage

IGSS

Gate – Body Leakage Current

IDSS

Zero Gate Voltage Drain Current

ID(on)*

On–State Drain Current

RDS(on)* Drain – Source On Resistance

VDS(on)* Drain – Source On Voltage

gFS*

Forward Transconductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

tON

Turn–On Time

tOFF

Turn–Off Time

Prelim. 8/00

2N7000CSM

Magnatec.

Telephone +44(0)1455 554711.

Fax +44(0)1455 558843.

E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk

ELECTRICAL CHARACTERISTICS (T

CASE = 25°C unless otherwise stated)

VGS = 0V

ID = 10mA

VDS = VGS

ID = 0.25mA

VGS = ±20VVDS = 0V

VDS = 60V

VGS = 0V

TCASE = 125°C

VDS³2VDS(ON) VGS = 4.5V

VGS = 10V

ID = 0.5A

TCASE = 125°C

VGS = 4.5V

ID = 75mA

VGS = 10V

ID = 0.5A

VGS = 10V

ID = 0.5A

VDS = 25V

VGS = 0V

f = 1MHz

VDD = 30V

VGEN = 10V

RL = 150W

RG = 25W

ID = 0.2A

0.8

3.0

-10

0.4

2.5

100

STATIC CHARACTERISTICS

DYNAMIC CHARACTERISTICS

SWITCHING CHARACTERISTICS

* Pulse Test: PW = 80

ms , d£ 1%

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

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