FS1AS-18A datasheet(2/4 Pages) MITSUBISHI

2 / 4 page

Feb.1999

µA

Ω

°C/W

900

±30

—

0.6

—

11.5

5.75

1.0

270

1.0

—

±10

15.0

7.50

—

1.5

2.27

ID = 1mA, VGS = 0V

IGS = ±100

µA, VDS = 0V

VGS = ±25V, VDS = 0V

VDS = 900V, VGS = 0V

ID = 1mA, VDS = 10V

ID = 0.5A, VGS = 10V

ID = 0.5A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 0.5A, VGS = 10V,

RGEN = RGS = 50

Ω

IS = 0.5A, VGS = 0V

Channel to case

MITSUBISHI Nch POWER MOSFET

FS1AS-18A

HIGH-SPEED SWITCHING USE

V (BR) DSS

V (BR) GSS

IGSS

IDSS

VGS (th)

rDS (ON)

VDS (ON)

yfs

Ciss

Coss

Crss

td (on)

td (off)

VSD

Rth (ch-c)

10–2

10–1

100

100 2101

35 7

102

35 7

103

35 7

101

tw = 100

TC = 25°C

Single Pulse

10ms

100ms

1ms

0.4

0.8

1.2

1.6

2.0

1020304050

PD = 55W

VGS = 20V

TC = 25°C

Pulse Test

10V

4.5V

100

200

100

150

0.2

0.4

0.6

0.8

1.0

VGS = 20V @

TC = 25°C

Pulse Test

10V

4.5V

POWER DISSIPATION DERATING CURVE

CASE TEMPERATURE TC (°C)

MAXIMUM SAFE OPERATING AREA

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Drain-source breakdown voltage

Gate-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

PERFORMANCE CURVES

FS1AS-18A Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

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