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2SA608 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA608 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 26-Jan-2011 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. CLASSIFICATION OF hFE Product-Rank 2SA608-D 2SA608-E 2SA608-F 2SA608-G Range 60~120 100~200 160~320 280~560 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.1 A Collector Power Dissipation PC 400 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -40 - - V IC= -100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100μA, IC=0 Collector Cut-Off Current ICBO - - -1 μA VCB= -25V, IE=0 Emitter Cut-Off Current IEBO - - -1 μA VEB= -4V, IC=0 DC Current Gain hFE 60 - 560 VCE= -6V, IC= -1mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V IC= -50mA, IB= -5mA Transition Frequency fT - 180 - MHz VCE= -6V, IC= -10mA Collector Output Capacitance Cob - 7 - pF VCB= -6V, f=1MHz TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G1.27 TYP. H1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J Emitter Collector Base |
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