H-Bridge and Dual Half Bridge Driver IC

TLE7182EM

Description and Electrical Characteristics

Data Sheet

12

Rev 1.1, 2010-09-30

The size of the capacitor together with this current will determine how long the high side MOSFET can be kept on

without recharging the bootstrap capacitor.

5.1.5

100% D.C. charge pumps

100% D.C. charge pumps are implemented for each high side output stage. Therefore the high side output stages

can be switch on for an unlimited time. These integrated charge pumps can handle leakage currents which will be

caused by external MOSFETs and the TLE7182EM itself. They are not strong enough to drive a 99% duty cycle

for a longer time. the charge pumps are running when the driver is not in sleep mode and assure that the bootstrap

capacitors are charged as long as the user does not apply critical duty cycle for a longer time.

5.1.6

Reverse polarity protection of motor bridge

The TLE7182EM provides an additional RPP pin to protect motor bridge for reverse polarity. This RPP pin can

drive an additional external N-channel power MOSFET designed in between battery and the motor bridge. The

RPP pin is internally supplied by the two integrated 100% D.C. charge pumps. They are especially designed to

handle additional current which is needed to drive a the gate charge of the reverse polarity MOSFET. The

guarantied output current of the charge pumps is specified.

5.1.7

Sleep mode

If ENA pin is set to low, the ERR flag will be set to low and the output stages will be switched off.

After ENA pin is kept low for t

In Sleep mode the complete chip is deactivated. This means the internal supply structure of the TLE7182EM will

be switched off. This mode is designed for lowest current consumption from the power net of the car. The passive

clamping is active. For details see the description of passive clamping, see Chapter 5.2.8.

The TLE7182EM will wake up, if ENA is set to high.The ENA pin is 45V compatible, so ENA can be directly be

connected to the ignition key signal KL15.

5.1.8

Electrical Characteristics

Electrical Characteristics MOSFET Drivers

V

(unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

Control inputs

5.1.1

Low level input voltage of Ixx

V

I_LL

––

1.0

V

–

5.1.2

High level input voltage of Ixx

V

I_HL

2.0

––V

–

5.1.3

Input hysteresis of Ixx

d

VI

100

200

–

mV

–

5.1.4

ILx pull-down resistor to GND

R

IL

320

540

770

k

Ω

V

VDH=0V or open

5.1.5

ILx pull-down resistor to GND

R

IL

19

32

50

k

Ω

V

5.1.6

IHx pull-up resistor to internal VDD

R

IH

30

–

80

k

Ω

–

5.1.7

Low level input voltage of ENA

V

E_LL

–

–

0.75

V

–

5.1.8

High level input voltage of ENA

V

E_HL

2.1

––V

–

5.1.9

Input hysteresis of ENA

d

VE

50

200

–

mV

–

5.1.10

ENA pull-down resistor to GND

R

IL

70

125

200

k

Ω

–