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D1202UK Datasheet(PDF) 1 Page - Seme LAB

Part # D1202UK
Description  METAL GATE RF SILICON FET
PDF  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

D1202UK Datasheet(HTML) 1 Page - Seme LAB

  D1202UK Datasheet HTML 1Page - Seme LAB D1202UK Datasheet HTML 2Page - Seme LAB  
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D1202UK
Prelim. 12/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
PD
Power Dissipation
BVDSS
Drain – Source Breakdown Voltage
BVGSS
Gate – Source Breakdown Voltage
ID(sat)
Drain Current
Tstg
Storage Temperature
Tj
Maximum Operating Junction Temperature
87W
40V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
G
K
M
J
I
E
D
(2 pls)
C
N
(typ)
A
B
F
(2 pls)
H
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
•HIGHGAIN–10dBMINIMUM
DP
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
GATE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
16.51
0.25
0.650
0.010
B
6.35
0.13
0.250
0.005
C
45°
45°
D
3.30
0.13
0.130
0.005
E
18.92
0.08
0.745
0.003
F
1.52
0.13
0.060
0.005
G
2.16
0.13
0.085
0.005
H
14.22
0.08
0.560
0.003
I
1.52
0.13
0.060
0.005
J
6.35
0.13
0.250
0.005
K
0.13
0.03
0.005
0.001
M
5.08
0.51
0.200
0.020
N
1.27 x 45°
0.13
0.050 x 45° 0.005


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