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BAS19 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAS19 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Any changing of specification will not be informed individual http://www.SeCoSGmbH.com L A B S G V 3 1 2 K J C H D Top View Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 Surface Mount Switching Diode BAS19 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR Vdc Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg – 55 to +150 °C DEVICE MARKING BAS19 = JP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 100 Vdc,TJ = 25 OC) (VR = 100 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) IR — — — 0.1 100 40 µAdc Reverse Breakdown Voltage (IBR = 100 µAdc) V(BR) 120 — Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) (IF = 200 mAdc) VF — — — — 715 855 1000 1250 mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD — 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) trr 50 ns 1.FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. FEATURES · Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications · High Conductance 1 ANODE 3 CATHODE 1 2 3 Elektronische Bauelemente 120 01-Jun-2002 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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