Elektronische Bauelemente

SMBT882SS

NPN Silicon

Epitaxial Planar Transistor

01-June-2002 Rev. A

Page 1 of 3

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SMBT882SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and

voltage regulator.

FEATURES

High current output up to 3A

Low saturation voltage

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

40

V

Collector to Emitter Voltage

30

V

Emitter to Base Voltage

5.0

V

Collector Current

3.0

A

Total Power Dissipation

Pd

750

mW

Junction, Storage Temperature

+150, -55 ~ +150

℃

CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

BVCEO

30

-

-

V

BVEBO

5.0

-

-

V

ICBO

-

-

1.0

μA

IEBO

-

-

1.0

μA

*VCE(sat)

-

-

0.5

V

*VBE(sat)

-

-

2.0

V

*hFE1

30

-

*hFE2

100

-

500

fT

-

90

-

MHz

Cob

-

45

-

pF

Rank

Q

P

E

Range

100 - 200

160 - 320

200 - 500

EMITTER

Dim

Min

Max

A

2.70

3.10

B

1.30

1.70

C

1.00

1.30

D

0.35

0.50

G

1.90 REF.

H

0.00

0.10

J

0.10

0.26

K

0.20

0.60

L

1.25

1.65

S

2.25

3.00

All Dimension in mm

SC-59

S

G

D

B

L

A

1

3

2

Top View

H

C

J

K

BASE

COLLECTOR