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MMBT4401 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT4401 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 5 page ![]() 1 2 3 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS THE RMAL CHARACTERISTICS DEVICE MARKING OFF CHARACTERISTICS Rating Symbol Value Unit VCEO 40 Vdc VCBO 60 Vdc VEBO 6.0 Vdc IC 600 mAdc Characteristic Symbol Max Unit P D 300 1.8 T hermal R esistance, J unction to Ambient 556 P D 300 2.4 Thermal Resistance, Junction to Ambient 417 Junction and Storage Temperature T J , Tstg -55 to +150 MMBT4401 = 2X Symbol Min Max Unit V(BR)CEO 40 V(BR)CBO 60 V(BR)EBO 6.0 IBEV 0.1 ICEX 0.1 http://www.SeCoSGmbH.com Elektronische Bauelemente K J C H L A B S G V 3 1 2 D Top View Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 1. FR±5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width =< 300 µs, Duty Cycle =< 2.0%. C C/W mW mW/ C C/W mW mW/ o o o o o C RθJA RθJA µAdc µAdc MMBT4401 — — — — — Any changing of specification will not be informed individual NPN Silicon Switching Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25 °C Collector Current — Continuous Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Vdc Vdc Vdc 01-Jun-2004 Rev. B Page 1 of 5 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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