SSG4502C datasheet(2/6 Pages) SECOS

2 / 6 page

Elektronische Bauelemente

SSG4502C

N-Ch: 10 A, 30 V, RDS(ON) 16 m

P-Ch: -8.5 A, -30 V, RDS(ON) 23 m

N & P-Ch Enhancement Mode Power MOSFET

27-Dec-2010 Rev. B

Page 2 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol Ch

Min.

Typ.

Max.

Unit

Teat Conditions

Static

VGS= 0V, ID= 250μA

Drain-Source Breakdown Voltage V(BR)DSS

-30

VGS= 0V, ID= -250μA

VDS= VGS, ID= 250μA

Gate Threshold Voltage

VGS(th)

-1

VDS= VGS, ID= -250μA

±100

VDS= 0V, VGS= 20V

Gate-Body Leakage

IGSS

±100

VDS= 0V, VGS= -20V

VDS= 24V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS= -24V, VGS= 0V

VDS= 5V, VGS= 10V

On-State Drain Current

ID(on)

-50

VDS= -5V, VGS= -10V

VGS= 10V, ID= 10A

VGS= 4.5V, ID= 8.4A

VGS= -10V, ID= -8.5A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID= -6.8A

VDS= 15V, ID= 10A

Forward Transconductance

gfs

VDS= -15V, ID= -9.5A

Dynamic

Total Gate Charge

3.3

Gate-Source Charge

Qgs

5.8

4.5

Gate-Drain Charge

Qgd

N-Channel

ID= 10A, VDS= 15V, VGS= 4.5V

P-Channel

ID= -10A, VDS= -15V, VGS= -4.5V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

N-Channel

VDD= 15V, VGS= 10V

ID= 1A, RGEN= 25Ω

P-Channel

VDD= -15V, VGS= -10V

ID= -1A, RGEN= 15Ω

Notes:

Pulse test：PW ≦ 300

μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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