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TEA1110AL-S14-R Datasheet(PDF) 4 Page - Unisonic Technologies |
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TEA1110AL-S14-R Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 9 page ![]() TEA1110A LINEAR INTEGRATED CIRCUIT UNISONICTECHNOLOGIESCO.,LTD 4 of 9 www.unisonic.com.tw QW-R108-014.C ELECTRIC CHARACTERISTICS(Cont.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Receiving amplifier (pins IR, QR and GAR) Voltage gain from IR to QR GVRX VIR = 4mV (RMS) 32 33 34 dB Gain variation with frequency referred to 1kHz GVRX(F) f = 300~3400 Hz ±0.2 dB Gain variation with temperature referred to 25°C GVRX(T) Ta = -25 ~ +75 °C ±0.3 dB Gain voltage reduction range GVRXR external resistor connected between GAR and QR 14 dB IP =0mA sine wave drive RL = 50Ω, THD =2% 0.25 V Maximum receiving signal (RMS value) VO(rms) IP = 0mA sine wave drive RL =450 Ω, THD =2% 0.35 Noise output voltage at pin R (RMS value) VNORX(rms) GVRX =33dB, IR open-circuit, RL =150Ω -87 dBVp Automatic gain control (pin AGC) Gain control range for microphone and receiving amplifiers with respect to ILINE=15mA GVTRX ILINE = 85mA 5.9 dB Highest line current for maximum gain ISTART 23 mA Lowest line current for minimum gain ISTOP 56 mA DTMF amplifier (pin DTMF) Voltage gain from DTMF to LN GVDTMF VDTMF = 20mV (RMS) MUTE = LOW 24.1 25.3 26.5 dB Gain variation with frequency referred to 1kHz GVDTMF(F) f = 300~3400Hz ±0.2 dB Gain variation with temperature referred to25°C GVDTMF(T) Ta = -25 ~ +75 °C ±0.4 dB Voltage gain from DTMF to QR (confidence tone) GVCT VDTMF = 20mV (RMS) RL = 150 Ω -15 dB Mute function (pin MUTE) LOW level input voltage VIL VEE -0.4 VEE +0.3 V HIGH level input voltage VIH VEE +1.5 VCC +0.4 V Input current MUTE I 1.5 μA Gain reduction for microphone and receiving amplifiers GVTRXM MUTE = LOW 80 dB |
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