SSG9435 datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

SSG9435

P-Ch Enhancement Mode Power MOSFET

-5.3 A, -30 V, RDS(ON) 55 mΩ

10-Aug-2010 Rev. C

Page 2 of 5

P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Parameter

Symbol Min.

Typ. Max. Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID=-250uA

Breakdown Voltage Temp. Coefficient

△

BVDSS/△

-0.037

V/℃ Reference to 25℃, ID=-1mA

Gate Threshold Voltage

VGS(th)

-1.0

-3.0

VDS=VGS, ID=-250uA

Forward Transconductance

gfs

VDS=-10V, ID=-5.3A

Gate-Source Leakage Current

IGSS

±100

nA VGS= ±16V

Drain-Source Leakage Current(Tj=25℃)

-1

uA VDS=-30V, VGS=0

Drain-Source Leakage Current(Tj=70℃)

IDSS

-5

uA VDS=-24V, VGS=0

VGS=-10V, ID=-5.3A

Static Drain-Source On-Resistance

RDS(ON)

mΩ

VGS=-4.5 V, ID=-4.2 A

Total Gate Charge2

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Change

Qgd

ID=-5.3 A

VDS=-15 V

VGS=-10 V

Turn-on Delay Time2

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS=-15 V

ID=-1 A

VGS=-10 V

RG=6 Ω

RD=15 Ω

Input Capacitance

Ciss

745

Output Capacitance

Coss

440

Reverse Transfer Capacitance

Crss

120

VGS=0 V

VDS=-15 V

f=1.0 MHz

SOURCE-DRAIN DIODE

Parameter

Symbol Min.

Typ. Max. Unit

Test Conditions

Forward On Voltage2

VSD

-0.75

-1.2

IS=-2.6A, VGS=0 V, TJ=25°C

Continuous Source Current (Body Diode)

-2.6

Pulsed Source Current (Body Diode)1

ISM

-20

VD = VG = 0V,

VS = -1.2 V

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

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