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MP6K11 Datasheet(PDF) 1 Page - Rohm |
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MP6K11 Datasheet(HTML) 1 Page - Rohm |
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1 / 7 page ![]() Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch + Nch MOSFET MP6K11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive). Application Switching Packaging specifications Inner circuit Package Taping Code TCR Basic ordering unit (pieces) 1000 MP6K11 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 3.5 A Pulsed IDP 12 A Continuous Is 1.6 A Pulsed Isp 12 A 2.0 W / TOTAL 1.4 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw 10s, Duty cycle1% *2 Mounted on a ceramic board. PD Type Source current (Body Diode) Drain current Parameter Power dissipation MPT6 (Duel) (1) (2) (3) (6) (5) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE *2 *1 *1 ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (6) (5) (4) 1/6 2011.04 - Rev.A |
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