ST1S09 datasheet(6/18 Pages) STMICROELECTRONICS

6 / 18 page

Electrical characteristics

ST1S09

6/18

Doc ID 13632 Rev 4

Electrical characteristics

Refer to Figure 21 application circuit VIN_SW = VIN_A = 5 V, VO = 1.2 V, C1 = 4.7 µF,

C2 = 22 µF, L1 = 2.7 µH, TJ = -30 to 125 °C (unless otherwise specified. Typical values are

referred to 25 °C)

Table 6.

Electrical characteristics for ST1S09PU

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Feedback voltage

784

800

816

IFB

VFB pin bias current

600

Input voltage

IO = 10 mA to 2 A

4.5

5.5

UVLO

Under voltage lock out

threshold

VI Rising

3.5

3.7

3.9

Hysteresis

150

OVP

Over voltage protection

threshold

VO rising

1.05 VO 1.1 VO

Over voltage protection

hysteresis

VO falling

IOVP

Overvoltage clamping current

VO = 1.2 V

300

Quiescent current

Not switching

1.5

2.5

Output current

VI = 4.5 to 5.5 V

(1)

%VO/ΔVI

Output line regulation

VI = 4.5 V to 5.5 V, IO = 100 mA

(1)

0.16

%VO/

ΔVI

%VO/ΔIO

Output load regulation

IO = 10 mA to 2 A

(1)

0.2

0.6

PWMfS

PWM switching frequency

VFB = 0.65 V

1.2

1.5

1.8

MHz

DMAX

Maximum duty cycle

Power good output threshold

0.92 VO

Power good output voltage low

ISINK = 6 mA open drain output

0.4

RDSON-N NMOS switch on resistance

ISW = 750 mA

0.1

RDSON-P PMOS switch on resistance

ISW = 750 mA

0.1

ISWL

Switching current limitation

(1)

2.5

2.9

3.5

Efficiency (1)

IO = 10 mA to 100 mA, VO = 3.3 V

IO = 100 mA to 2 A, VO = 3.3 V

TSHDN

Thermal shutdown

150

°C

THYS

Thermal shutdown hysteresis

°C

%VO/ΔIO

Load transient response

IO = 100 mA to 1 A, TA = 25 °C

tR = tF ≥ 200 ns

(1)

-10

+10

%VO

%VO/ΔIO

Short circuit removal response

IO = 10 mA to IO = short,

TA = 25 °C

(1)

-10

+10

%VO

Guaranteed by design, but not tested in production.

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