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BAV20WS Datasheet(PDF) 2 Page - Diotec Semiconductor |
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BAV20WS Datasheet(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() BAV19WS...BAV21WS Characteristics (Tj = 25° C) Kennwerte (Tj = 25° C) Forward voltage 1) Durchlass-Spannung IF = 100 mA IF = 200 mA VF VF < 1 V < 1.25 V Leakage current 1) Sperrstrom Tj = 25° C BAV19WS BAV20WS BAV21WS VR = 100 V VR = 150 V VR = 200 V IR < 100 nA Max. junction capacitance – Max. Sperrschichtkapazität VR = 0 V, f = 1 MHz CT < 5 pF Reverse recovery time – Sperrverzug IF = 30 mA über/ through IR = 30 mA bis / to IR = 1 mA trr < 50 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 625 K/W 2 Marking – Stempelung BAV19WS BAV20WS BAV21WS WO 1 Tested with pulses tp = 300 µs, duty cycles ≤ 2 % gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2 % 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com © Diotec Semiconductor AG Forward characteristics (typical values) Durchlasskennlinien (typische Werte) V F [V] 1.4 1.0 0.8 0.6 0.4 0 [A] I F 10-4 10-3 10-2 10-1 1 T = 25°C j T = 125°C j [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 |
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