Naina Semiconductor

1

D-95, Sector 63, Noida

sales@nainasemi.com

Single Phase Bridge Rectifier

Features

•

Glass passivated chip junction

•

Surge capability of 150 A

•

High efficiency

•

Electrically isolated metal case for maximum heat dissipation

•

Mounting: thru hole for # 6 screw

noted)

Parameters

Symbol

Maximum operating junction

temperature range

Maximum storage temperature

range

T

Approximate weight

W

Parameter

Symbol

Maximum repetitive peak reverse

voltage

V

Maximum RMS voltage

V

Maximum DC blocking voltage

V

Maximum average forward output

current

Peak forward surge current (10ms)

single half sine-wave superimposed

on rated load

Maximum DC forward voltage drop

per element @ 7.5 A

Maximum DC reverse

current at rated DC

blocking voltage per

element

25

125

emiconductor Ltd.

Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120

sales@nainasemi.com

•

www.nainasemi.com

Single Phase Bridge Rectifier

Electrically isolated metal case for maximum heat dissipation

GBPC

Symbol

Values

Units

- 55 to +

125

- 55 to +

150

30

g

C unless otherwise noted)

Symbol

10MB

50

100

200

400

600

800

35

70

140

280

420

560

50

100

200

400

600

800

F(AV)

10.0

FSM

150

1.1

5.0

500

10MB

4205450

•

Fax: 0120-4273653

GBPC

Units

800

1000

V

560

700

V

800

1000

V

A

A

V

µA