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130NTD Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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130NTD Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor 1 D-95, Sector 63, Noida sales@nainasemi.com Thyristor Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Thermal & Mechanical Specifications (T Parameter Operating junction temperature range Thermal resistance, junction to case Electrical Characteristics (TA = 25 0C unless otherwise Parameter Maximum average on-state current Maximum repetitive peak reverse voltage range Forward voltage drop Gate current required to trigger Gate voltage required to trigger Holding current range Maximum latching current Critical rate of rise of off-state voltage RMS isolated voltage Maximum Ratings (TA = 25 0C unless otherwise noted) Parameter Maximum average forward current @ TJ = 85 0C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I 2t for fusing @ t = 10ms emiconductor Ltd. 13 Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com Thyristor – Diode Module Improved glass passivation for high reliability (TA = 25 0C unless otherwise noted) Symbol TJ -65 to +1 Rth(JC) C unless otherwise noted) Symbol IT(max) Maximum repetitive peak reverse voltage range VRRM 200 to 1600 VFM IGT VGT IH IL dv/dt VISO C unless otherwise noted) Symbol Values Units IF(AV) 130 A IF(RMS) 300 A IFSM 3300 A I 2t 51 kA 2s M2 PACKAGE 130NTD 4205450 • Fax: 0120-4273653 Values Units 65 to +125 0C 0.18 0C/W Values Units 130 A 200 to 1600 V 1.55 V 150 mA 2.5 V 200 mA 300 mA 1000 V/µs 3500 V M2 PACKAGE |
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