2N5631 datasheet(1/3 Pages) ISC

Part #	2N5631

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5631

DESCRIPTION

・With TO-3 package

・Complement to type 2N6031

・High collector-emitter sustaining voltage

・High DC current gain@IC=8A

・Low collector saturation voltage

APPLICATIONS

・For high power audio amplifier and

high voltage switching regulator

circuits applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

140

V

VCEO

Collector-emitter voltage

Open base

140

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

16

A

ICM

Collector current-peak

20

A

IB

Base current

5.0

A

PD

Total Power Dissipation

TC=25℃

200

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

0.875

℃/W

Fig.1 simplified outline (TO-3) and symbol

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2N5631 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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