2N5664 datasheet(1/3 Pages) ISC

Part #	2N5664

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5664 2N5665

DESCRIPTION

・With TO-66 package

・High breakdown voltage

APPLICATIONS

・High speed switching and linear amplifier

・High-voltage operational amplifiers

・Switching regulators ,converters

・Deflection stages and high fidelity amplifers

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5664

250

VCBO

Collector-base voltage

2N5665

Open emitter

400

V

2N5664

200

VCEO

Collector-emitter voltage

2N5665

Open base

300

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current

5.0

A

IB

Base current

1.0

A

PT

Total power dissipation

TC=25℃

52.5

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-C

Thermal resistance junction to case

5.0

℃/W

Fig.1 simplified outline (TO-66) and symbol

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2N5664 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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