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2N5758 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5758 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5758 100 2N5759 120 VCBO Collector-base voltage 2N5760 Open emitter 140 V 2N5758 100 2N5759 120 VCEO Collector-emitter voltage 2N5760 Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 10 A IB Base current 4 A PD Total Power Dissipation TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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