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2N5991 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N5991
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5991 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N5991 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N5991 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N5991 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N5989 2N5990 2N5991
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5989
40
2N5990
60
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5991
IC=0.2A ;IB=0
80
V
VCEsat-1
Collector-emitter saturation voltage
IC=6A ;IB=0.6A
0.6
V
VCEsat-2
Collector-emitter saturation voltage
IC=12A; IB=1.8A
1.7
V
VBEsat
Base-emitter saturation voltage
IC=12A; IB=1.8A
2.5
V
VBE
Base-emitter on voltage
IC=6A ; VCE=2V
1.4
V
2N5989
VCE=20V; IB=0
2N5990
VCE=30V; IB=0
ICEO
Collector cut-off current
2N5991
VCE=40V; IB=0
2.0
mA
ICEX
Collector cut-off current
VCE=RatedVCE;VBE=-1.5V
TC=125℃
0.2
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1.5A ; VCE=2V
40
hFE-2
DC current gain
IC=6A ; VCE=2V
20
120
hFE-3
DC current gain
IC=12A ; VCE=2V
7.0
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
300
pF
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
2.0
MHz



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