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2N6260 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6260 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6260 DESCRIPTION ・With TO-66 package ・Low saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・High-fidelity amplifers ・Solenoid drivers ・Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A IB Base current 2 A PT Total power dissipation TC=25℃ 29 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 3.5 ℃/W Fig.1 simplified outline (TO-66) and symbol |
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