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2N6262 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6262 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6262 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 150 V VCEsat Collector-emitter saturation voltge IC=5A ;IB=0.5A 2.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 3.5 V VBE Base-emitter on voltage IC=3A ; VCE=2V 1.8 V ICEO Collector cut-off current VCE=100V; IB=0 1.0 mA ICEV Collector cut-off current VCE=150V; VBE(off)=1.5V TC=150℃ 0.1 5.0 mA ICBO Emitter cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=2V 20 70 fT Transition frequency IC=1A;VCE=10V 0.8 MHz |
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