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2N6465 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6465 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6465 2N6466 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6467 2N6468 APPLICATIONS ・For use in audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6465 110 VCBO Collector-base voltage 2N6466 Open emitter 130 V 2N6465 100 VCEO Collector-emitter voltage 2N6466 Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A PD Total power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 2.5 ℃/W Fig.1 simplified outline (TO-66) and symbol |
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