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2N6674 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6674
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6674 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Power Transistors
2N6674/6675
DESCRIPTION
·High Power Dissipation
·High Switching Speed
·Collector-Emitter Breakdown Voltage-
:
V(BR)CEO= 300V(Min)- 2N6674
= 400V(Min)- 2N6675
APPLICATIONS
Designed for high voltage switching applications such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃/W
SYMBOL
PARAMETER
VALUE
UNIT
2N6674
450
VCBO
Collector-Base Voltage
2N6675
650
V
2N6674
300
VCEO
Collector-Emitter Voltage
2N6675
400
2N6674
450
VCEX
Collector-Emitter Voltage
2N6675
650
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
5.0
A
Collector Power Dissipation@Ta=25℃
6
PC
Collector Power Dissipation@TC=25℃
175
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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