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2N6932 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N6932
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6932 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6932 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6932 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6932 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N6931 2N6932
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6931
300
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6932
IC=0.2A ;L=25mH
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA ;IC=0
8
V
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=2A
TC=100℃
1.0
2.0
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=2A
TC=100℃
1.5
1.5
V
2N6931
VCE=450V; VBE=-1.5V
TC=100℃
0.1
1.0
ICEV
Collector cut-off current
2N6932
VCE=650V; VBE=-1.5V
TC=100℃
0.1
1.0
mA
IEBO
Emitter cut-off current
VEB=8V; IC=0
2
mA
hFE
DC current gain
IC=10A ; VCE=3V
8
35
COB
Collector output capacitance
f=1MHz;VCB=10V
80
300
pF
Switching times resistive load
td
Delay time
0.1
μs
tr
Rise time
0.7
μs
tstg
Storage time
2.5
μs
tf
Fall time
IC=10A; IB1=-IB2=2A
VCC=300V, RC=30Ω
VBB=-5V;tp=30μs
0.5
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
0.83
℃/W



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