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2SA2031 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA2031 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SA2031 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -230 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -250 V V(BREBO Emitter-base breakdown voltage IE=-5mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-7.5 A;IB=-0.75A -0.3 -2.0 V VBE Base-emitter saturation voltage IC=-7.5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-250V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 160 hFE-2 DC current gain IC=-7.5A ; VCE=-5V 35 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 400 pF fT Transition frequency IC=-1A ; VCE=-5V 10 MHz Switching times ton Turn-on time 0.45 μs tstg Storage time 1.75 μs tf Fall time IC=-7.5A;RL=6.67Ω IB1=-IB2=-0.75A VCC=-50V 0.25 μs |
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