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2SB753 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB753 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB753 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.3 -0.5 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -0.9 -1.4 V ICBO Collector cut-off current VCB=-100V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 240 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 250 pF fT Transition frequency IC=-1A ; VCE=-4V 10 MHz Switching times ton Turn-on time 0.4 μs tstg Storage time 2.5 μs tf Fall time IB1=- IB2=-0.3A ; VCC=-30V RL=10Ω 0.5 μs hFE-1Classifications O Y 70-140 120-240 |
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