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2SB754 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB754 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB754 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -50 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-4.0A; IB=-0.4A -0.2 -0.4 V VBE Base-emitter voltage IC=-4A ; VCE=-1V -0.9 -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 240 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 fT Transition frequency IC=-1A ; VCE=-5V 10 MHz COB Collector output capacitance IE=0;f=1MHz ; VCB=-10V 300 pF hFE-1 Classifications O Y 70-140 120-240 |
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