2SB775 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB775

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -50mA ; RBE=∞

-85

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -5mA; IE= 0

-100

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

-6

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -4A; IB= -0.4A

-2.0

VBE(on)

Base -Emitter On Voltage

IC= -1A; VCE= -5V

-1.5

ICBO

Collector Cutoff Current

VCB= -40V; IE=0

-100

μA

IEBO

Emitter Cutoff Current

VEB= -4V; IC=0

-100

μA

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

200

hFE-2

DC Current Gain

IC= -3A; VCE= -5V

COB

Output Capacitance

VCB= -10V; ftest= 1.0MHz

160

Current-Gain—Bandwidth Product

IC=-1A; VCE= -5V

MHz

Switching times

ton

Turn-on Time

0.12

μs

tstg

Storage Time

1.29

μs

Fall Time

IC= -1A ,RL= 20Ω,

IB1= -IB2= -0.1A,VCC=-20V

0.36

μs

hFE-1 Classifications

60-120

100-200

isc Website：www.iscsemi.cn

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