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2SB827 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB827 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB827 · DESCRIPTION ・ With TO-3PN package ・ Complement to type 2SD1063 ・ Wide area of safe operation ・ Low collector-emitter saturation voltage : VCE(sat)=(–)0.4V max. APPLICATIONS ・ Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -14 A PC Collector power dissipation TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol |
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