2SB945 datasheet(2/3 Pages) ISC

Part #	2SB945

Description	isc Silicon PNP Power Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 3 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB945

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -10mA ; IB= 0

-80

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -4A; IB= -0.2A

-0.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -4A; IB= -0.2A

-1.5

ICBO

Collector Cutoff Current

VCB= -100V ; IE= 0

-10

μA

IEBO

Emitter Cutoff Current

VEB= -5V ; IC= 0

-50

μA

hFE-1

DC Current Gain

IC= -0.1A ; VCE= -2V

hFE-2

DC Current Gain

IC= -2A ; VCE= -2V

260

Current-Gain—Bandwidth Product

IC=-0.5A; VCE= -10V;ftest=10MHz

MHz

Switching times

ton

Turn-on Time

0.13

μs

tstg

Storage Time

0.5

μs

Fall Time

IC= -2.0A ,IB1= -IB2= -0.2A,

0.13

μs

hFE-2 Classifications

90-180

130-260

isc Website：www.iscsemi.cn

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