2SB1101 datasheet(2/3 Pages) ISC

Part #	2SB1101

Description	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1101

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-25mA ,IB=0

-60

V(BR)EBO

Emitter-base breakdown voltage

IE=-50mA ,IC=0

-7

VCEsat -1

Collector-emitter saturation voltage

IC=-2A; IB=-4mA

-1.5

VCEsat -2

Collector-emitter saturation voltage

IC=-4A; IB=-40mA

-3.0

VBEsat-1

Base-emitter saturation voltage

IC=-2A; IB=-4mA

-2.0

VBEsat-2

Base-emitter saturation voltage

IC=-4A; IB=-40mA

-3.5

ICBO

Collector cut-off current

VCB=-60V; IE=0

-100

μA

ICEO

Collecto cut-off current

VCE=-50V; RBE=∞

-10

μA

hFE

DC current gain

IC=-2A ; VCE=-3V

1000

20000

Diode forward voltage

ID=4A;

3.0

Switching times

ton

Turn-on time

0.8

μs

Storage time

4.0

μs

Fall time

IC=-2A IB1=-IB2=-4mA

1.0

μs

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