2SB1193 datasheet(2/3 Pages) ISC

Part #	2SB1193

Description	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1193

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=-2A; RBE=∞;L=10mH

-120

V(BR)EBO

Emitter-base breakdown voltage

IE=-50mA; IC=0

-7

VCEsat-1

Collector-emitter saturation voltage

IC=-4A ;IB=-8mA

-1.5

VCEsat-2

Collector-emitter saturation voltage

IC=-8A ;IB=-80mA

-3.0

VBEsat-1

Base-emitter saturation voltage

IC=-4A ;IB=-8mA

-2.0

VBEsat-2

Base-emitter saturation voltage

IC=-8A ;IB=-80mA

-3.5

ICBO

Collector cut-off current

VCB=-120V; IE=0

-100

μA

ICEO

Collector cut-off current

VCE=-100V; RBE=∞

-10

μA

hFE

DC current gain

IC=-4A ; VCE=-3V

1000

20000

Switching times

ton

Turn-on time

0.7

μs

tstg

Storage time

3.5

μs

Fall time

IC=-4A ;IB1=-IB2=-8mA

VCC=-50V

2.0

μs

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