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2SB1366 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1366 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1366 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-0.5A;VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 60 200 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 fT Transition frequency IC=-0.5A ; VCE=-5V 9.0 MHz COB Collector output capacitance f=1MHz;VCB=-10V 150 pF Switching times ton Turn-on time 0.4 μs ts Storage time 1.7 μs tf Fall time IC=-2.0A IB1=-IB2=-0.2A VCC=-30V ,RL=15Ω 0.5 μs hFE-1 Classifications O Y 60-120 100-200 |
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