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2SB1607 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1607 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1607 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-5A ; IB=-0.25A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A ; IB=-0.25A -1.5 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V;IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-3A ; VCE=-2V 90 260 fT Transition frequency IC=-0.5A ; VCE=-10V;f=10MHz 30 MHz Switching times ton Turn-on time 0.5 μs tstg Storage time 1.5 μs tf Fall time IC=-3A; IB1=-IB2=-0.3A 0.1 μs hFE-2 classifications Q P 90-180 130-260 |
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