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2SC1847 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1847 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION ・ ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 1.5 A ICM Collector current-peak 3 A 1.2* 1 PC Collector power dissipation TC=25℃ 5* 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink |
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