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2SC2527 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SC2527
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC2527 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC2527 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC2527 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC2527 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC2527
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ; RBE=∞
120
V
V(BR)CBO
Collector-base breakdown voltage
IC=50μA ; IE=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50μA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.8
V
VBE
Base-emitter on voltage
IC=5 A ; VCE=5V
1.7
V
ICBO
Collector cut-off current
VCB=120V ;IE=0
50
μA
ICEO
Collector cut-off current
VCE=120V; IB=0
1
mA
IEBO
Emitter cut-off current
VEB=7V ;IC=0
50
μA
hFE-1
DC current gain
IC=1 A ; VCE=5V
60
200
hFE -2
DC current gain
IC=5 A ; VCE=5V
40
fT
Transition frequency
IC=1 A ; VCE=10V
80
MHz
COB
Output capacitance
IE=0 ; VCB=10V; f=1MHz
180
pF
Switching times
tr
Rise time
0.3
μs
ts
Storage time
1.3
μs
tf
Fall time
IC=7.5 A; RL=4Ω
IB1=-IB2=0.75A
0.2
μs



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