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2SC3252 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3252 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3252 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 75mA 0.4 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 100 μA hFE DC Current Gain IC= 1A; VCE= 2V 70 280 fT Current-Gain—Bandwidth Product IC=1A; VCE= 5V 100 MHz hFE Classifications Q R S 70-140 100-200 140-280 isc Website:www.iscsemi.cn 2 |
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