2SC4596 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4596

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 3A ; IB= 0.3A, L= 1mH

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 50μA; IE= 0

100

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50μA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.15A

0.3

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.2A

0.5

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 3A; IB= 0.15A

1.2

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 4A; IB= 0.2A

1.5

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

μA

hFE

DC Current Gain

IC= 1A ; VCE= 2V

100

320

Current-Gain—Bandwidth Product

IC= 0.5A ; VCE= 10V

120

MHz

COB

Output Capacitance

IE=0; VCB= 10V; ftest= 1.0MHz

Switching times

ton

Turn-on Time

0.3

μs

tstg

Storage Time

1.5

μs

Fall Time

IC= 3A ; IB1= -IB2= 0.15A

RL= 10Ω;VCC≈ 30V

0.3

μs

hFE classifications

100-200

160-320

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