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2SD557 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD557 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD557 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.2A; IB= 0 140 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A 2.0 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 2V 1.5 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 2.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA hFE DC Current Gain IC= 5A; VCE= 4V 30 isc Website:www.iscsemi.cn |
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