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2SD733K Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD733K Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD733 2SD733K CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD733 140 V(BR)CEO Collector-emitter breakdown voltage 2SD733K IC=50mA ;IB=0 160 V 2SD733 160 V(BR)CBO Collector-emitter breakdown voltage 2SD733K IC=5mA ;IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A 0.7 2.5 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=-5V 40 320 hFE-2 DC current gain IC=5A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 15 MHz hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 |
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