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2SD855 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD855 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD855 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V 1.3 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 B 300 μA ICES Collector Cutoff Current VCE= 80V; IE= 0 200 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE-1 DC Current Gain IC= 0.2A; VCE= 4V 40 450 hFE-2 DC Current Gain IC= 1A; VCE= 4V 15 hFE-1 Classifications R Q P O 40-90 70-150 120-250 200-450 isc Website:www.iscsemi.cn 2 |
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