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2SD1571 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1571 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1571 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 400 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 1.0 V VBEsat Base-emitter saturation voltage IC=0.5A; IB=50mA 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=10mA ; VCE=5V 8 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 fT Transition frequency IE=-0.1A ; VCE=10V 4 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 75 pF tf Fall time IC=0.5A; IB1=-IB2=50mA VCC=200V; RL=400Ω 1.0 μs |
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