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2SD2553 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2553 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2553 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IC=400mA ;IB=0 5 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 5 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 0.9 1.2 V ICBO Collector cut-off current VCB=1700V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 66 200 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 28 hFE-2 DC current gain IC=6A ; VCE=5V 5 9 VF Diode forward voltage IF=8A 1.6 2.0 V Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 155 pF fT Transition frequency IC=0.1A ; VCE=10V 2 MHz Switching times : ts Storage time 9 12 μs tf Fall time ICP=6A;IB1=1.5A fH =15.75kHz 0.3 0.7 μs |
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