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2SD5070 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD5070 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 VECF C-E Diode Forward Voltage IF= 2.5A 2.0 V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz tf Fall Time IC= 2A, IB1= 0.6A; IB2= -1.2A RL= 100Ω; VCC= 200V 0.4 μs isc Website:www.iscsemi.cn 2 |
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