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BD540 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD540
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD540 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD540
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
·Complement to Type BD539
APPLICATIONS
·Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
Collector Power Dissipation
@ Ta=25℃
2
PC
Collector Power Dissipation
@ TC=25℃
45
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.78
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃/W
isc Website：www.iscsemi.cn


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