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BD683 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD683 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BD683 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=1.5A; IB=6mA 2.5 V VBE Base-emitter on voltage IC=1.5A ; VCE=3V 2.5 V ICBO Collector cut-off current VCB=120V; IE=0 0.2 mA ICEO Collector cut-off current VCE=60V; IB=0 0.2 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=500mA ; VCE=3V 2200 hFE-2 DC current gain IC=1.5A ; VCE=3V 750 hFE-3 DC current gain IC=4A ; VCE=3V 1500 ton Turn-on time 0.8 2 μs toff Turn-off time IC=1.5A;IB1=-IB2=6mA VCC=30V 4.5 8 μs |
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