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BDV66 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDV66
Description  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDV66 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDV66/A/B/C
DESCRIPTION
·Collector Current -IC= -16A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.0V(Max.)@ IC= -10A
·Complement to Type BDV67/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDV66
-80
BDV66A
-100
BDV66B
-120
VCBO
Collector-Base
Voltage
BDV66C
-140
V
BDV66
-60
BDV66A
-80
BDV66B
-100
VCEO
Collector-Emitter
Voltage
BDV66C
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-16
A
ICM
Collector Current-Peak
-20
A
IB
B
Base Current-Continuous
-0.5
A
PC
Collector Power Dissipation
@ TC=25℃
175
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.625
℃/W
isc Website：www.iscsemi.cn


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