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BDW73B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDW73B
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW73B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW73/A/B/C/D
DESCRIPTION
·Collector Current -IC= 8A
·High DC Current Gain-hFE= 750(Min.)@ IC= 3A
·Complement to Type BDW74/A/B/C/D
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW73
45
BDW73A
60
BDW73B
80
BDW73C
100
VCBO
Collector-Base
Voltage
BDW73D
120
V
BDW73
45
BDW73A
60
BDW73B
80
BDW73C
100
VCEO
Collector-Emitter
Voltage
BDW73D
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
B
Base Current-Continuous
0.3
A
Collector Power Dissipation
@ Ta=25℃
2
PC
Collector Power Dissipation
@ TC=25℃
80
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.56
℃/W
Rth j-c
Thermal Resistance, Junction to Case
62.5
℃/W
isc Website：www.iscsemi.cn


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