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BU508DFI Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BU508DFI
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU508DFI Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU508DFI
DESCRIPTION
・With TO-3PML package
・High voltage,high speed
・Built-in damper diode
APPLICATIONS
・For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
8
A
ICP
Collector current (Pulse)
15
A
Ptot
Total power dissipation
TC=25℃
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction to case
2.5
℃/W
Fig.1 simplified outline (TO-3PML) and symbol


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